Influence of solid-liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields
Identifieur interne : 001961 ( Main/Repository ); précédent : 001960; suivant : 001962Influence of solid-liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields
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Abstract
InSb single crystals were grown in the ?111? direction by a modified Czochralski method. Ultrasonic waves at a frequency of 0.71 MHz were introduced into the melt parallel and perpendicular to the pulling axis at frequencies of 1.25, 1.44, and 2 MHz under the solid-liquid interface. The influence of solid-liquid interface shape on morphology and elimination of striations was found during crystal growth due to the effect of the ultrasound in two orthogonal directions.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of solid-liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields</title><author><name sortKey="Kozhemyakin, G N" uniqKey="Kozhemyakin G">G. N. Kozhemyakin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Crystal Growth, Department of Micro and Nanoelectronics, V. Dal Eastern Ukrainian National University, Bl. Molodezhniy 20A</s1><s2>Lugansk 91034</s2><s3>UKR</s3><sZ>1 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lugansk 91034</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0015723</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 13-0015723 INIST</idno><idno type="RBID">Pascal:13-0015723</idno><idno type="wicri:Area/Main/Corpus">001478</idno><idno type="wicri:Area/Main/Repository">001961</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth</term><term>Crystal growth from melts</term><term>Czochralski method</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>Liquid solid interface</term><term>Monocrystals</term><term>Morphology</term><term>Segregation</term><term>Solidification front</term><term>Theoretical study</term><term>Ultrasonic waves</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Front solidification</term><term>Interface liquide solide</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Croissance cristalline</term><term>Méthode Czochralski</term><term>Croissance cristalline en phase fondue</term><term>Morphologie</term><term>Ultrason</term><term>Etude théorique</term><term>Ségrégation</term><term>Antimoniure d'indium</term><term>Monocristal</term><term>InSb</term><term>8110</term><term>8110F</term><term>6475</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InSb single crystals were grown in the ?111? direction by a modified Czochralski method. Ultrasonic waves at a frequency of 0.71 MHz were introduced into the melt parallel and perpendicular to the pulling axis at frequencies of 1.25, 1.44, and 2 MHz under the solid-liquid interface. The influence of solid-liquid interface shape on morphology and elimination of striations was found during crystal growth due to the effect of the ultrasound in two orthogonal directions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>360</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Influence of solid-liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>5th International Workshop on Crystal Growth Technology, Berlin, Germany, 26 June-30 June 2011</s1></fA09><fA11 i1="01" i2="1"><s1>KOZHEMYAKIN (G. N.)</s1></fA11><fA12 i1="01" i2="1"><s1>UECKER (Reinhard)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BLISS (David F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>GANSCHOW (Steffen)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratory of Crystal Growth, Department of Micro and Nanoelectronics, V. Dal Eastern Ukrainian National University, Bl. Molodezhniy 20A</s1><s2>Lugansk 91034</s2><s3>UKR</s3><sZ>1 aut.</sZ></fA14><fA15 i1="01"><s1>Leibniz Institute for Crystal Growth</s1><s2>Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>International Organization for Crystal Growth (IOCG)</s1><s3>INT</s3><s9>org-cong.</s9></fA18><fA20><s1>35-37</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000506829970060</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0015723</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>InSb single crystals were grown in the ?111? direction by a modified Czochralski method. Ultrasonic waves at a frequency of 0.71 MHz were introduced into the melt parallel and perpendicular to the pulling axis at frequencies of 1.25, 1.44, and 2 MHz under the solid-liquid interface. 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